https://doi.org/10.1140/epjp/s13360-020-00149-6
Regular Article
Performance of n-on-p planar pixel sensors with active edges at high-luminosity environment
1
Département de physique, Université de Batna 1, Batna, Algeria
2
ISMA, laboratoire d’Ingénierie et Sciences des matériaux Avancés, BP/11, Khenchela, 40016, Khenchela, Algeria
3
Laboratoire de l’Accelérateur Lineaire, Université Paris-Sud XI, CNRS/IN2P3, Orsay, France
4
IFAE, Institut de Fisica d’Altes Energies, Barcelona, Spain
5
CDTA, Centre de Développement des Technologies Avancées, Algiers, Algeria
* e-mail: ddjamai@yahoo.fr
Received:
24
June
2019
Accepted:
19
November
2019
Published online:
23
January
2020
Future high-energy physics experiments require highly segmented silicon sensors of increased geometrical efficiency with the ability to withstand extremely high radiation damage. The performance of planar n-on-p sensors with active edges is simulated at high radiation fluences up to 1 × 1016 neq/cm2, using a three-level trap model for p-type silicon material. Taking advantage of the secondary ion mass spectrometry (SIMS) technique, an accurate representation of the structure was obtained in terms of doping profile. The breakdown voltage, leakage current, hole density and electric field distributions as well as the charge collection efficiency (CCE) are studied as a function of radiation fluence.
© Società Italiana di Fisica (SIF) and Springer-Verlag GmbH Germany, part of Springer Nature, 2020
