https://doi.org/10.1140/epjp/i2019-12463-y
Regular Article
Numerical simulations of the linear drift memristor model
1
Institute of Engineering, Science and Technology, Federal University of Jequitinhonha and Mucuri’s Valleys, Janaúba, Brazil
2
Graduate Program in Science, State University of Ponta Grossa, Ponta Grossa, Brazil
3
Department of Physics, Federal University of Paraná, Curitiba, Brazil
4
Campus Centro-Oeste, Federal University of São João del-Rei, Divinópolis, Brazil
5
Institute of Physics, University of São Paulo, São Paulo, Brazil
6
Department of Mathematics and Statistics, State University of Ponta Grossa, Ponta Grossa, Brazil
* e-mail: fabianosferrari@gmail.com
Received:
4
October
2018
Accepted:
10
December
2018
Published online:
15
March
2019
Memristor is a passive element theoretically proposed by Leon Chua in the 1970’s. It started to receive attention after 2008, when researchers from the HP Labs presented a device with memristive properties. Since then, several models have been proposed to describe the memristor. In this work, we analyze the linear drift model, comparing the numerical solutions with analytical solutions and SPICE simulations. We demonstrate that different solutions can be found depending on the method and parameter set.
© Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature, 2019
