https://doi.org/10.1140/epjp/i2018-12008-0
Regular Article
Analytical study on temperature effect on piezoelectric exciton dissociation rate (Onsager dissociation rate)
School of Advanced Materials Science and Engineering, Sungkyunkwan University, 16419, Suwon, Korea
* e-mail: smkim417@gmail.com
Received:
6
November
2017
Accepted:
9
April
2018
Published online:
21
May
2018
We discussed analytically the temperature effect on the piezoelectric exciton dissociation rate (Onsager dissociation rate, D on the p-n junction interface (hybrid inorganic-organic system). For high temperatures (
), a power series expansion for D about a field parameter b (
) was used, resulting in 
. For low temperatures (
), 
resulted in an asymptotically complex value that approached zero, and allowed D to also approach zero. Therefore, it is suggested that high temperatures will be useful for verifying piezoelectric exciton dissociation theoretically.
© Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature, 2018
