Eur. Phys. J. Plus (2018) 133: 122
https://doi.org/10.1140/epjp/i2018-11957-4

Regular Article

Electron-nuclear spin dynamics of Ga centers in GaAsN dilute nitride semiconductors probed by pump-probe spectroscopy

¹ Departamento de Física, Universidad Autónoma Metropolitana Iztapalapa, Av. San Rafael Atlixco 186, 09340, Cuidad de México, Mexico
² Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077, Toulouse, France
³ Ioffe Physical-Technical Institute, 194021, St. Petersburg, Russia
⁴ Área de Física Teórica y Materia Condensada, Universidad Autónoma Metropolitana Azcapotzalco, Av. San Pablo 180, 02200, Cuidad de México, Mexico

^* e-mail: jcss@xanum.uam.mx

Received: 14 February 2018
Accepted: 24 February 2018
Published online: 26 March 2018

Abstract

We propose an experimental procedure to track the evolution of electronic and nuclear spins in Ga²⁺ centers in GaAsN dilute semiconductors. The method is based on a pump-probe scheme that enables to monitor the time evolution of the three components of the electronic and nuclear spin variables. In contrast to other characterization methods, as nuclear magnetic resonance, this one only needs moderate magnetic fields ( mT), and does not require microwave irradiation. Specifically, we carry out a series of tests for different experimental conditions in order to optimize the procedure for maximum sensitivity in the measurement of the circular degree of polarization. Based on previous experimental results and the theoretical calculations presented here, we estimate that the method could yield a time resolution of about 10ps.