https://doi.org/10.1140/epjp/i2017-11383-2
Regular Article
A novel passivation process of silicon nanowires by a low-cost PECVD technique for deposition of hydrogenated silicon nitride using SiH4 and N2 as precursor gases
1
Université de Tunis El Manar, Faculté des Sciences Mathématiques, Physiques et Naturelles de Tunis, 2092, Tunis, Tunisia
2
LAboratoire des Nanomatériaux et des Systèmes pour les Energies Renouvelables (LANSER), Centre de Recherche et des Technologies de l’Energie (CRTEn), BP 95, 2050, Hammam-Lif, Tunisia
3
Nanophotonics Technology Center (NTC), Universidad Politécnica de Valencia (UPV), 46022, Valencia, Spain
* e-mail: lamia.bouaziz89@gmail.com
Received:
27
September
2016
Accepted:
30
January
2017
Published online:
8
March
2017
In this work, a different SiNx passivation process of silicon nanowires has been opted for the deposition of a hydrogenated silicon nitride (SiNx:H) by a low-cost plasma enhanced chemical vapor deposition (PECVD) using silane ( SiH4 and nitrogen ( N2 as reactive gases. This study is focused on the effect of the gas flow ratio on chemical composition, morphological, optical and optoelectronic properties of silicon nanowires. The existence of Si-N and Si-H bonds was proven by the Fourier transmission infrared (FTIR) spectrum. Morphological structures were shown by scanning electron microscopy (SEM), and the roughness was investigated by atomic force microscopy (AFM). A low reflectivity less than 6% in the wavelength range 250-1200nm has been shown by UV-visible spectroscopy. Furthermore, the thickness and the refractive index of the passivation layer is determined by ellipsometry measurements. As a result, an improvement in minority carrier lifetime has been obtained by reducing surface recombination of silicon nanowires.
© Società Italiana di Fisica and Springer-Verlag Berlin Heidelberg, 2017