First observation of sol-gel derived Al:CsZnO/CsZnO bilayer thin film for solar cells application
Department of Physics, Faculty of Science, Vali-e-Asr University of Rafsanjan, 7718897111, Rafsanjan, Iran
2 Department of Engineering, Islamic Azad University, Sirjan Branch, Sirjan, Iran
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Accepted: 13 September 2016
Published online: 10 October 2016
In this research, we fabricated CsZnO and Al:CsZnO/CsZnO bilayer thin films grown by the spin-coating-assisted sol-gel method on ITO substrate. The influence of diverse velocity of spin-coating (500, 1000, 1500, 2000, 2500 and 3000RPM) and also annealing times (30, 60, 90, 120, 150 and 180min) on the characteristics of the ZnO thin film was examined. The samples were examined by X-ray diffraction, scanning electron microscopy, Uv-Vis spectrometer and conductivity measurement. With the optimization of the velocity of spin-coating (2500RPM) and annealing times (60min), we fabricated Al:CsZnO/CsZnO bilayer thin films with diverse dopant concentration. By comparing the effect of dopant concentration with different dopant ratio (0, 0.5, 1.0 and 2%), 0.5% of CsZnO and Al:CsZnO/CsZnO bilayer was found as the most effective doping level with the best conductivity properties among the selected doping concentrations.
© Società Italiana di Fisica and Springer-Verlag Berlin Heidelberg, 2016