https://doi.org/10.1140/epjp/i2016-16246-8
Regular Article
Phase transformation and kinetic study of a Ga5Ge15Te80 chalcogenide glass using the non-isothermal method
1
Semiconductors Laboratory, Solid State Physics, Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt
2
Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt
* e-mail: amshakra@yahoo.com
Received:
24
January
2016
Accepted:
22
June
2016
Published online:
27
July
2016
The crystallization kinetics for a Ga5Ge15Te80 chalcogenide glass, prepared by melt quenching technique, have been studied by differential thermal analysis (DTA) under non-isothermal condition, with five different heating rates 
and 30 °
C/min . The DTA trace indicates the presence of two crystallization peaks. The glass transition temperature 
, the crystallization temperature 
and the melting point temperature 
were determined. The dependence of , 
and 
on the heating rate 
, were used for the determination of the activation energy of glass transition 
and crystallization 
. The DTA data have been analyzed in terms of activation energy, stability and dimensionality of growth (m by different models viz. Kissinger's, Mahadeavan, Augis and Bennet's and Matusita's equations. The Avrami exponents (n and (m have also been determined; the obtained values of (n and (m are 2.959 and 1.959, respectively, indicating bulk nucleation with two-dimensional growth.
© Società Italiana di Fisica and Springer-Verlag Berlin Heidelberg, 2016
