Eur. Phys. J. Plus (2016) 131: 189
https://doi.org/10.1140/epjp/i2016-16189-0

Regular Article

Spectroscopic ellipsometry and electrical characterizations of InGaAs:Mg thin films lattice matched to InP

¹ Laboratoire de Micro-Optoélectroniques et Nanostructures, Monastir University, Monastir, Tunisia
² KACST-Intel Consortium Center of Excellence in Nano-manufacturing Application (CENA), Riyadh, Saudi Arabia
³ Department of Physics, Faculty of Science, University of Jeddah, P.O. Box 80327, 21589, Jeddah, Saudi Arabia
⁴ Équipe de Spectroscopie Raman, Département de Physique, Faculté des Sciences de Tunis, Campus Universitaire, El-Manar, 2092, Tunis, Tunisia
⁵ Department of Physics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, 21589, Jeddah, Saudi Arabia
⁶ Physics and Engineering Mathematics Department, Faculty of Electronic Engineering, Menoufia University, 32952, Menouf, Egypt
⁷ High School of Sciences and Technology of Hammam Sousse, Sousse University, Sousse, Tunisia

^* e-mail: amor.sayari@laposte.net

Received: 12 March 2016
Accepted: 9 May 2016
Published online: 9 June 2016

Abstract

Mg-doped InGaAs films were grown at 560 ^° C lattice matched to InP semi-insulating substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp₂Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD) and spectroscopic ellipsometry (SE) are the tools used in this work. The crystalline quality and the n-p conversion of the InGaAs:Mg films are described and discussed in relation to the Cp₂Mg flow. Distinguishing triple emissions peaks in PL spectra are observed and seem to be strongly dependent on the Cp₂Mg flow. SE was used to investigate the interband transitions in InGaAs:Mg/InP heterointerfaces and the different critical point energies were identified.