https://doi.org/10.1140/epjp/i2016-16189-0
Regular Article
Spectroscopic ellipsometry and electrical characterizations of InGaAs:Mg thin films lattice matched to InP
1
Laboratoire de Micro-Optoélectroniques et Nanostructures, Monastir University, Monastir, Tunisia
2
KACST-Intel Consortium Center of Excellence in Nano-manufacturing Application (CENA), Riyadh, Saudi Arabia
3
Department of Physics, Faculty of Science, University of Jeddah, P.O. Box 80327, 21589, Jeddah, Saudi Arabia
4
Équipe de Spectroscopie Raman, Département de Physique, Faculté des Sciences de Tunis, Campus Universitaire, El-Manar, 2092, Tunis, Tunisia
5
Department of Physics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, 21589, Jeddah, Saudi Arabia
6
Physics and Engineering Mathematics Department, Faculty of Electronic Engineering, Menoufia University, 32952, Menouf, Egypt
7
High School of Sciences and Technology of Hammam Sousse, Sousse University, Sousse, Tunisia
* e-mail: amor.sayari@laposte.net
Received:
12
March
2016
Accepted:
9
May
2016
Published online:
9
June
2016
Mg-doped InGaAs films were grown at 560 ° C lattice matched to InP semi-insulating substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp2Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD) and spectroscopic ellipsometry (SE) are the tools used in this work. The crystalline quality and the n-p conversion of the InGaAs:Mg films are described and discussed in relation to the Cp2Mg flow. Distinguishing triple emissions peaks in PL spectra are observed and seem to be strongly dependent on the Cp2Mg flow. SE was used to investigate the interband transitions in InGaAs:Mg/InP heterointerfaces and the different critical point energies were identified.
© Società Italiana di Fisica and Springer-Verlag Berlin Heidelberg, 2016
