Eur. Phys. J. Plus (2016) 131: 92
https://doi.org/10.1140/epjp/i2016-16092-8

Regular Article

Electromagnetic metamaterial-inspired band gap and perfect transmission in semiconductor and graphene-based electronic and photonic structures

¹ Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
² Dept. of EEE, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
³ Department of Electrical and Computer Systems Engineering, Monash University, Monash, Australia
⁴ Department of Electrical and Computer Engineering, University of Malaya, Kuala Lumpur, Malaysia
⁵ Department of Physics, University of Dhaka, 1000, Dhaka, Bangladesh
⁶ Department of Electrical Engineering, University of South Carolina, 29208, Columbia, SC, USA

^* e-mail: A0107276@nus.edu.sg

Received: 3 October 2015
Revised: 29 January 2016
Accepted: 10 February 2016
Published online: 13 April 2016

Abstract

In this article, at first we propose a unified and compact classification of single negative electromagnetic metamaterial-based perfect transmission unit cells. The classes are named as: type-A, -B and -C unit cells. Then based on the classification, we have extended these ideas in semiconductor and graphene regimes. For type-A: Based on the idea of electromagnetic Spatial Average Single Negative bandgap, novel bandgap structures have been proposed for electron transmission in semiconductor heterostructures. For type-B: with dielectric-graphene-dielectric structure, almost all angle transparency is achieved for both polarizations of electromagnetic wave in the terahertz frequency range instead of the conventional transparency in the microwave frequency range. Finally the application of the gated dielectric-graphene-dielectric has been demonstrated for the modulation and switching purpose.