Eur. Phys. J. Plus (2016) 131: 39
https://doi.org/10.1140/epjp/i2016-16039-1

Regular Article

Dielectric constant of moderately doped InP at low frequencies and temperatures

¹ Department of Physics, Faculty of Science, Alexandria University, Alexandria, Egypt
² Deanship of Scientific Research, King Saud University, 1145, Riyadh, Saudi Arabia

^* e-mail: kalfaramawi@yahoo.com

Received: 2 September 2015
Accepted: 4 January 2016
Published online: 19 February 2016

Abstract

Dielectric measurements were carried out on moderately doped n-InP at low temperatures down to 10 K and at frequencies in the range of 120-10⁵ Hz. The low-temperature asymptotic value of the relative dielectric constant () was found to be greater than the host crystal value. The excess of above the host crystal value is attributed to the contribution of impurities. This contribution is originated from an overlap between adjacent wave functions of the impurities. A comparison was made with the theoretical approach taking into account the effect of such overlap and a good agreement was obtained.