Root mean square roughness of nano porous silicon by scattering spectra
Department of Physics, Alzahra University, 1993893973, Tehran, Iran
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Revised: 20 May 2014
Accepted: 31 August 2014
Published online: 3 October 2014
We demonstrate that surface roughness can be obtained by scattering spectra and is more accurate than mechanical devices such as scanning probe microscopy (SPM) and profilometry techniques such as stylus (contact) profilometry. Due to the probe effect in these techniques, most of the information may be lost. Root mean square (σ) is obtained experimentally by scattering spectra and theoretically by the Davies-Bennett/Porteus equation. Then, σ is compared with AFM results. Roughness behaviour is studied for four nano porous silicon surfaces, which have been fabricated using the electrochemical method at different etching times. Also, a band gap region can be determined directly from reflection spectrum.
© Società Italiana di Fisica and Springer-Verlag Berlin Heidelberg, 2014