Eur. Phys. J. Plus (2011) 126: 58
https://doi.org/10.1140/epjp/i2011-11058-0

Regular Article

Planar channeling radiation by 20-800 MeV electrons in a thin silicon carbide

¹ Sabzevar Tarbiat Moallem University, Sabzevar, Iran
² INFN Laboratori Nazionali di Frascati, Via E. Fermi 40, 00044, Frascati (RM), Italy
³ RAS P.N. Lebedev Physical Institute, Leninsky Pr. 53, 119991, Moscow, Russia

^* e-mail: sultan.dabagov@lnf.infn.it

Received: 6 December 2010
Accepted: 3 May 2011
Published online: 23 June 2011

Abstract

We present spectral distributions of channeling radiation by 20-800MeV electrons for various planes of a thin 4H polytype silicon carbide crystal. The quantum theory of channeling radiation has been applied to calculate the transverse electron states in the continuum potential of crystal planes and to study the transition energies, linewidths, depth dependences of quantum states populations, and spectral radiation distributions. At electron energies higher than 100MeV the spectral distributions of emitted radiation have been calculated within the classical approach, and compared successfully with the quantum mechanical solutions. We discuss specific properties of planar channeling radiation in a 4H SiC polytype and find some new features of electron channeling in 4H SiC not available in other structures.