Eur. Phys. J. Plus (2011) 126: 8
https://doi.org/10.1140/epjp/i2011-11008-x

Regular Article

Determination of the hole mobility and effective Hall factor of p -type GaSb

¹ Science Department, Teachers College, King Saud University, Riyadh, KSA
² Physics Department, Faculty of Science, Alexandria University, Alexandria, Egypt

^* e-mail: kalgarmawy@ksu.edu.sa

Received: 14 October 2010
Accepted: 10 December 2010
Published online: 21 January 2011

Abstract

Hole mobility and effective Hall factor for p -type GaSb were studied theoretically as a function of temperature from 10K up to 300K. The mobility calculations were based on the relaxation time approximation taking into account elastic scattering mechanisms including lattice and ionized-impurity types. The results showed that the ionized-impurity scattering is the dominant mechanism at low-temperature range while lattice scattering may be the dominant one at higher temperatures. The effective Hall factor was investigated using the two-band model assuming parabolic valence bands. Hall parameters of p -GaSb were analyzed by assuming that the bands of heavy and light holes are decoupled. If the impurity scattering exceeds all other scattering processes, the effective Hall factor may tend to unity but when the lattice scattering process dominates, this approximation is not valid.