https://doi.org/10.1140/epjp/s13360-025-06609-1
Regular Article
Broad-range dielectric function characteristics of III-V compounds
1
Research Center for New Energy Technology (RCNET), National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), 201800, Jiading, Shanghai, People’s Republic of China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences (UCAS), 100049, Shijingshan, Beijing, People’s Republic of China
a
haj211@mail.sim.ac.cn
b
z.x.liu@mail.sim.ac.cn
Received:
19
April
2025
Accepted:
30
June
2025
Published online:
25
July
2025
Over the past decade, III-V compounds have emerged as focal point in semiconductor research owing to their exceptional optoelectronic properties. However, conventional dielectric function models face limitations in broad-range fitting, hindering systematic application of dielectric properties across wide spectrum ranges. Therefore, we propose a composite dielectric function model that combines Drude oscillator with modified Lorentz oscillator, enabling unified characterization of the dielectric response from 0.5 to 15 eV for III-V compounds. The generality of this model is demonstrated by two key findings: 1) accurately reproduces the dielectric functions of gallium arsenide (GaAs) and indium phosphide (InP) across wide spectral ranges, including plasma oscillations and interband transitions; 2) quantitatively fits energies associated with the evolution of electrons evolve from damped resonance states to plasmon in GaAs and InP. The model shows excellent agreement with optical data, as confirmed by low root-mean-squared error values across all energy regions. This work elucidates that the dynamic evolution of electron transitions from bound state to plasmon is related to the damping effect act on the oscillators. Building on this insight, this work establishes a robust theoretical framework for broadband optical design.
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© The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2025
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
